FQB7N60 Fairchild Semiconductor, FQB7N60 Datasheet

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FQB7N60

Manufacturer Part Number
FQB7N60
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings 
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
 T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 7.4A, 600V, R
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
FQI Series
I
2
-PAK
FQB7N60 / FQI7N60
DS(on)
Typ
--
--
--
-55 to +150
= 1.0
29.6
14.2
3.13
1.14
600
580
142
300
7.4
4.7
7.4
4.5
30
G
@V
!
!
Max
0.88
62.5
GS
40
October 2008
= 10 V
! "
! "
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Rev A1 October 2008
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQB7N60 Summary of contents

Page 1

... A = 25° Derate above 25°C Parameter October 2008 ® QFET = 1 DS(on " " ! " ! " G " " " " FQB7N60 / FQI7N60 Units 600 V 7.4 A 4 30 580 mJ 7.4 A 14.2 mJ 4.5 V/ns 3.13 W 142 W 1.14 W/°C -55 to +150 °C 300 °C Typ ...

Page 2

... V = 50V 7.4A, di/dt  200A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 10V Note : ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  A 0.5 D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev A1 October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev A1 October 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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