FQU3N50C Fairchild Semiconductor, FQU3N50C Datasheet

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FQU3N50C

Manufacturer Part Number
FQU3N50C
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FQU3N50C
Manufacturer:
FAIRCHILD
Quantity:
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FQU3N50CTU
Manufacturer:
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Quantity:
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©2008 Fairchild Semiconductor Corporation
FQD3N50C / FQU3N50C Rev. B
FQD3N50C / FQU3N50C
500V N-Channel MOSFET
Features
• 2.5A, 500V, R
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 8.5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
θJA
, T
Symbol
Symbol
STG
DS(on)
G
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
S
= 2.5Ω @V
D-PAK
FQD Series
GS
D
= 10 V
- Derate above 25°C
- Continuous (T
- Continuous (T
- Pulsed
C
= 25°C)
Parameter
Parameter
G
D
S
C
C
= 25°C)
= 100°C)
1
I-PAK
FQU Series
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Typ
--
--
--
FQD3N50C/FQU3N50C
G
-55 to +150
± 30
0.28
500
200
300
2.5
1.5
2.5
3.5
4.5
10
35
Max
110
3.5
50
S
QFET
D
March 2008
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQU3N50C Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FQD3N50C / FQU3N50C Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... ≤ 2.5A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQD3N50C / FQU3N50C Rev. B Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 600 C iss 400 C oss 200 C rss Drain-Source Voltage [V] DS FQD3N50C / FQU3N50C Rev. B Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage Variation vs ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQD3N50C / FQU3N50C Rev. B (Continued) Figure 8. On-Resistance Variation Notes : µ 250 A D 100 150 200 ° C] Figure 10. Maximum Drain Current 3 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQD3N50C / FQU3N50C Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQD3N50C / FQU3N50C Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQD3N50C / FQU3N50C Rev. B D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FQD3N50C / FQU3N50C Rev. B (Continued) I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQD3N50C / FQU3N50C Rev. B FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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