FDB52N20 Fairchild Semiconductor, FDB52N20 Datasheet
FDB52N20
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FDB52N20 Summary of contents
Page 1
... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FDB52N20 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... G ≤ 52A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB52N20 Rev. A Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions ...
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... Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C 4000 oss C iss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS FDB52N20 Rev Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage 10V ...
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... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [ FDB52N20 Rev. A (Continued) 3.0 2.5 2.0 1.5 1.0 * Notes : 0.5 µ 250 A D 0.0 100 150 200 -100 ° C] Figure 10. Maximum Drain Current 60 µ µ ...
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... 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDB52N20 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...
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... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB52N20 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...
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... Mechanical Dimensions FDB52N20 Rev. A D2-PAK 7 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB52N20 Rev. A FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...