FDB44N25 Fairchild Semiconductor, FDB44N25 Datasheet - Page 3

• Manufacturer Part Number: FDB44N25
• Manufacturer: Fairchild Semiconductor

FDB44N25 Rev A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
2
1
0
10
6000
5000
4000
3000
2000
1000
Drain Current and Gate Voltage
-1
Top :
Bottom :
0.125
0.100
0.075
0.050
0.025
0.000
0
10
-1
0
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
V
DS
C
C
C
oss
rss
iss
, Drain-Source Voltage [V]
V
DS
10
, Drain-Source Voltage [V]
0
50
10
I
0
D
, Drain Current [A]
V
GS
75
= 10V
100
C
C
C
iss
oss
rss
10
= C
= C
= C
V
1
10
1. 250µ s Pulse Test
2. T
GS
Notes :
gs
gd
ds
1
= 20V
+ C
+ C
C
= 25
Note : T
gd
gd
(C
125
1. V
2. f = 1 MHz
℃
Note ;
ds
= shorted)
J
GS
= 25
= 0 V
℃
150
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
Figure 4. Body Diode Forward Voltage
2
1
0
0.2
Figure 6. Gate Charge Characteristics
0
2
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
10
25
4
o
150
C
150
0.6
o
C
V
Q
V
and Temperatue
SD
G
GS
20
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25
0.8
V
V
V
6
DS
DS
DS
= 125V
= 50V
= 200V
30
1.0
-55
o
C
1.2
8
40
1. V
2. 250µ s Pulse Test
1.4
Notes :
Note : I
1. V
2. 250µ s Pulse Test
GS
Notes :
= 0V
DS
50
10
D
= 40V
= 44A
1.6
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1.8
12