FQN1N60C Fairchild Semiconductor, FQN1N60C Datasheet

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FQN1N60C

Manufacturer Part Number
FQN1N60C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?s proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2005 Fairchild Semiconductor Corporation
FQN1N60C Rev. A
FQN1N60C
600V N-Channel MOSFET
Features
• 0.3 A, 600 V, R
• Low gate charge ( typical 4.8 nC )
• Low Crss ( typical 3.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
, T
JL
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
DS(on)
= 11.5
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
@ V
A
L
Parameter
Parameter
= 25°C)
= 25°C)
GS
= 10 V
C
C
TO-92
SSN Series
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 6a)
(Note 6b)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
G
Typ
! ! ! !
! ! ! !
--
--
FQN1N60C
-55 to +150
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
D
! ! ! !
! ! ! !
! ! ! !
! ! ! !
S
0.18
0.02
● ●
● ●
● ●
● ●
● ●
● ●
600
300
0.3
1.2
0.3
0.3
4.5
33
1
3
30
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Max
140
50
QFET
www.fairchildsemi.com
Units
Units
W/°C
V/ns
°C/W
°C/W
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQN1N60C Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Lead JL R Thermal Resistance, Junction-to-Ambient JA ©2005 Fairchild Semiconductor Corporation FQN1N60C Rev. A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Reference point of the R is the drain lead JL b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (R is the sum of the junction-to-case and case-to-ambient thermal resistance FQN1N60C Rev. A Package Reel Size TO- 25°C unless otherwise noted ...

Page 3

... D Figure 5. Capacitance Characteristics 250 200 C iss 150 C oss 100 C rss Drain-Source Voltage [V] DS FQN1N60C Rev. A Figure 2. Transfer Characteristics 0 10 Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 20V GS ※ ...

Page 4

... V , Drain-Source Voltage [ FQN1N60C Rev. A (Continued) Figure 8. On-Resistance Variation Notes : ※ 250 µA D 100 150 200 o C] Figure 10. Maximum Drain Current 100 ...

Page 5

... 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FQN1N60C Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FQN1N60C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions 0.46 1.27TYP [1.27 0.20 FQN1N60C Rev. A TO-92 +0.25 4.58 –0.15 0.10 1.27TYP ] [1.27 ] 0.20 3.60 0.20 (R2.29) 7 +0.10 0.38 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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