FQD6N40C Fairchild Semiconductor, FQD6N40C Datasheet

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FQD6N40C

Manufacturer Part Number
FQD6N40C
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Internationa
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient.*
Thermal Resistance, Junction-to-Ambient.
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)*
Parameter
= 25°C)
Parameter
G
T
C
D
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
4.5A, 400V, R
FQD6N40C / FQU6N40C
Typ
DS(on)
--
--
--
-55 to +150
= 1.0
0.38
400
270
300
4.5
2.7
4.5
4.8
4.5
2.5
18
48
30
G
! ! ! !
! ! ! !
@V
Max
110
2.6
50
October 2008
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
GS
QFET
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
= 10 V
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A1, October 2008
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD6N40C Summary of contents

Page 1

... ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● FQD6N40C / FQU6N40C Units 400 V 4 270 mJ 4.5 A 4.8 mJ 4.5 V/ns 2.5 W ...

Page 2

... 6A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor Internationa T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 400 V, V ...

Page 3

... Drain Current and Gate Voltage 1200 1000 800 C iss 600 C oss 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Internationa ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V GS ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Internationa (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.0 -100 100 150 200 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Internationa Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Internationa + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Internationa D - PAK Dimensions in Millimeters Rev. A1, October 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Internationa I - PAK Dimensions in Millimeters Rev. A1, October 2008 ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQD6N40C / FQU6N40C Rev. A1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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