FQD16N25C Fairchild Semiconductor, FQD16N25C Datasheet - Page 3

• Manufacturer Part Number: FQD16N25C
• Manufacturer: Fairchild Semiconductor

FQD16N25C Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
10
10
10
0
10
-1
1.5
1.0
0.5
0.0
1
0
10
-1
-1
Top :
Bottom : 4.5 V
0
※
1. V
2. f = 1 MHz
Notes :
GS
10.0 V
= 0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
10
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
0
D
0
, Drain Current [A]
20
C
C
C
oss
rss
iss
V
GS
= 10V
30
※
C
C
C
1. 250µ s Pulse Test
2. T
iss
oss
rss
Notes :
= C
= C
= C
C
10
10
= 25 ℃
gs
ds
gd
1
1
+ C
+ C
※
Note : T
gd
gd
40
(C
V
ds
GS
= shorted)
J
= 20V
= 25 ℃
50
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
12
10
10
10
-1
1
0
8
6
4
2
0
-1
2
1
0
0.2
0
25
o
C
Variation vs. Source Current
and Temperatue
0.4
150
o
C
10
150 ℃
4
0.6
V
V
GS
Q
SD
, Gate-Source Voltage [V]
G
, Total Gate Charge [nC]
25 ℃
, Source-Drain voltage [V]
V
DS
0.8
-55
20
V
= 200V
DS
o
C
V
= 125V
DS
6
1.0
= 50V
30
1.2
※
1. V
2. 250µ s Pulse Test
Notes :
※
DS
8
1. V
2. 250µ s Pulse Test
1.4
※
Notes :
= 40V
GS
Note : I
40
= 0V
D
1.6
= 15.6A
10
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1.8
50