FQI4N80 Fairchild Semiconductor, FQI4N80 Datasheet - Page 3

• Manufacturer Part Number: FQI4N80
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor International
Typical Characteristics
1200
1000
800
600
400
200
10
10
10
10
-1
-2
7
6
5
4
3
2
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
10
, Drain Current [A]
0
0
4
V
GS
= 20V
C
C
C
V
rss
iss
oss
GS
= 10V
6
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
1
ds
1
C
+ C
+ C
= 25℃
8
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
J
GS
= 25℃
= shorted)
= 0 V
10
3
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.4
4
25
o
C
4
150℃
150
V
V
Q
and Temperature
o
GS
SD
C
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
0.6
8
V
V
DS
V
DS
DS
= 640V
= 400V
= 160V
25℃
6
-55
o
0.8
12
C
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
1.0
16
= 0V
D
= 3.9A
1.2
10
20
Rev. A1, Oct 2008