FDD8N50NZ Fairchild Semiconductor, FDD8N50NZ Datasheet - Page 3
FDD8N50NZ
Manufacturer Part Number
FDD8N50NZ
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD8N50NZ.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8N50NZ
Manufacturer:
ON/安森美
Quantity:
20 000
FDD8N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1200
0.03
Figure 1. On-Region Characteristics
900
600
300
0.1
2.0
1.6
1.2
0.8
0.4
30
10
1
0.03
0
0.1
0
V
GS
=
15.0 V
10.0 V
C
0.1
Drain Current and Gate Voltage
3
C
V
C
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
oss
iss
DS
rss
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
6
V
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
= 10V
9
1
*Notes:
1. 250
2. T
V
*Note: T
12
GS
C
= 25
μ
(
= 20V
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
C
10
C
15
= 25
GS
10
= 0V
o
C
)
20
18
30
3
100
0.1
30
10
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.4
2
0
V
SD
0.8
3
, Body Diode Forward Voltage [V]
V
Variation vs. Source Current
and Temperature
Q
4
GS
150
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
150
V
V
V
o
C
DS
DS
DS
o
1.2
C
6
= 100V
= 250V
= 400V
25
6
o
C
*Notes:
1.6
25
1. V
2. 250
9
*Notes:
1. V
2. 250
-55
o
C
*Note: I
DS
o
GS
C
μ
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
8
2.0
12
D
= 6.5A
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2.4
10
15