FCB36N60N Fairchild Semiconductor, FCB36N60N Datasheet

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FCB36N60N

Manufacturer Part Number
FCB36N60N
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*When mounted on the minmium pad size recommended (PCB Mount)
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
FCB36N60N
N-Channel MOSFET
600V, 36A, 90m
Features
• R
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
*Drain current limited by maximum junction temperature
D
DM
AR
J
L
DSS
GSS
AS
AR
D
JC
JA
JA
, T
Symbol
Symbol
DS(on)
*
STG
= 81m ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
G
GS
= 10V, I
S
D
= 18A
T
C
= 25
Parameter
Parameter
D
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
o
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
FCB36N60N
FCB36N60N
-55 to +150
S
D
1800
22.7
3.12
62.5
600
±30
108
100
312
300
2.6
0.4
36
12
20
40
SupreMOS
September 2010
www.fairchildsemi.com
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FCB36N60N Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient JA *When mounted on the minmium pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. A Description = 18A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 12A 25, Starting T = 25 36A, di/dt  200A/ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCB36N60N Rev. A Package Reel Size 2 D -PAK 330mm unless otherwise noted C Test Conditions I ...

Page 3

... Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5. Capacitance Characteristics FCB36N60N Rev. A Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com ...

Page 4

... Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve FCB36N60N Rev. A (Continued) Figure 8. On-Resistance Variation vs. Temperature Figure 10. Maximum Drain Current vs. Case Temperature www.fairchildsemi.com ...

Page 5

... FCB36N60N Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCB36N60N Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCB36N60N Rev PAK 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCB36N60N Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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