FDPF320N06L Fairchild Semiconductor, FDPF320N06L Datasheet - Page 3

• Manufacturer Part Number: FDPF320N06L
• Manufacturer: Fairchild Semiconductor

FDPF320N06L Rev. A4
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
4000
1000
Figure 3. On-Resistance Variation vs.
0.04
0.03
0.02
0.01
Figure 1. On-Region Characteristics
100
200
100
40
10
2
0.1
0.1
0
V
GS
C
C
C
oss
rss
iss
= 15.0V
Drain Current and Gate Voltage
10.0V
V
8.0V
5.0V
4.0V
3.5V
3.0V
V
20
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
1
V
40
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
GS
= 10V
V
GS
= 20V
*Notes:
60
1. 250
2. T
1
*Note: T
C
= 25
(
10
μ
C ds = shorted
s Pulse Test
*Note:
o
1. V
2. f = 1MHz
80
C
C
= 25
GS
= 0V
o
C
)
100
60
4
3
100
100
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
1
1
8
6
4
2
0
0.0
1
0
*Notes:
1. V
2. 250
V
DS
SD
4
μ
= 10V
, Body Diode Forward Voltage [V]
s Pulse Test
Variation vs. Source Current
and Temperature
V
Q
2
GS
g
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
175
0.5
8
175
V
V
V
o
DS
DS
DS
C
o
C
= 12V
= 30V
= 48V
12
3
-55
o
C
*Notes:
1. V
2. 250
25
1.0
25
16
*Note: I
o
GS
C
o
C
μ
= 0V
s Pulse Test
4
D
20
= 21A
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