FDP085N10A_F102 Fairchild Semiconductor, FDP085N10A_F102 Datasheet - Page 4

• Manufacturer Part Number: FDP085N10A_F102
• Manufacturer: Fairchild Semiconductor

FDP085N10A_F102 Rev. A
Typical Performance Characteristics
Figure 11. Eoss vs. Drain to Soure Voltage
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1000
100
1.12
1.08
1.04
1.00
0.96
0.92
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
1
0
-80
*Notes:
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
vs. Temperature
C
J
-40
= 175
= 25
V
20
DS
T
V
J
o
DS
, Drain to Source Voltage
, Junction Temperature
C
o
C
, Drain-Source Voltage [V]
0
DS(on)
40
10
40
80
60
120
*Notes:
DC
10ms
100
1ms
10
1. V
2. I
[
o
μ
[
80
μ
C
V
D
s
s
GS
]
]
= 250
100
160
= 0V
μ
A
200
100
200
(Continued)
4
Figure 12. Unclamped Inductive
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
100
30
10
2.5
2.0
1.5
1.0
0.5
80
60
40
20
1
0.01
0
-80
25
STARTING T
R
θ
JC
Switching Capability
-40
vs. Temperature
= 0.8
50
vs. Case Temperature
0.1
T
t
T
AV
J
C
, Junction Temperature
o
, TIME IN AVALANCHE (ms)
, Case Temperature
C/W
J
0
If R = 0
t
If R = 0
t
AV
AV
= 150
75
= (L)
= (L/R)In
o
(
I
C
40
AS
1
)
[(
/
(
100
1.3*RATED BV
I
AS
*R
)
80
/
(
STARTING T
1.3*RATED BV
V
125
10
GS
[
120
DSS
o
= 10V
*Notes:
C
-V
[
1. V
2. I
]
o
DD
C
)
DSS
D
www.fairchildsemi.com
J
]
150
GS
= 96A
160
-V
= 25
100 300
DD
= 10V
)
+1
o
C
]
200
175