FDMC86520L Fairchild Semiconductor, FDMC86520L Datasheet

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FDMC86520L

Manufacturer Part Number
FDMC86520L
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMC86520L Rev.C
FDMC86520L
N-Channel Power Trench
60 V, 22 A, 7.9 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86520L
DS(on)
DS(on)
= 7.9 mΩ at V
= 11.7 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
MLP 3.3x3.3
FDMC86520L
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 13.5 A
= 11.5 A
Pin 1
T
A
®
= 25 °C unless otherwise noted
Parameter
MOSFET
S
S
S
G
Power 33
Package
Bottom
1
T
T
T
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
D
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
DS(on)
5
6
7
8
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
13.5
±20
2.3
3.1
60
22
55
40
53
60
79
August 2011
www.fairchildsemi.com
3000 units
Quantity
1
4
3
2
Units
°C/W
G
S
S
S
mJ
°C
W
V
V
A

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FDMC86520L Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86520L FDMC86520L ©2011 Fairchild Semiconductor Corporation FDMC86520L Rev.C ® MOSFET General Description = 13 This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node = 11 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 0.3 mH FDMC86520L Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC86520L Rev °C unless otherwise noted 3 μ s 1.5 2.0 2 100 125 150 100 0 ...

Page 4

... SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC86520L Rev °C unless otherwise noted J 10000 1000 100 125 C 10 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. FDMC86520L Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout 0. PIN#1 QUADRANT TOP VIEW 0.8 MAX 0.10 C 0.08 C 0.05 0.00 SIDE VIEW SEATING PLANE PIN #1 IDENT 1 0.55 (4X) 0.45 1.15 R0.15 0.30 8 0.65 FDMC86520L Rev.C 3. 3.30 0. (0.20) 2.32 2.22 0.79 4 0.35 2.05 1.95 5 0.40 (8X) 0.30 0. 1.95 0.05 C BOTTOM VIEW 6 RECOMMENDED LAND PATTERN A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14 ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC86520L Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® ...

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