FDMC7582 Fairchild Semiconductor, FDMC7582 Datasheet - Page 2

• Manufacturer Part Number: FDMC7582
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. E
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
ΔT
ΔT
g(TOT)
g(TOT)
gs
gd
rr
Symbol
AS
θJA
DSS
GS(th)
DSS
J
J
of 38 mJ is based on starting T
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 4.5V
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
o
C; N-ch: L = 0.3 mH, I
2
T
a.
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
53 °C/W when mounted on a
1 in
2
pad of 2 oz copper
AS
= 16 A, V
I
I
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
I
D
D
D
F
DD
DS
GS
GS
GS
GS
GS
DD
DS
DD
GS
DD
GS
GS
= 250 μA , V
= 250 μA , referenced to 25 °C
= 250 μA , referenced to 25 °C
= 16.7 A, di/dt = 100 A/μs
= 23 V, V
= 20 V, V
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 13 V, V
= 0 V, I
= 0 V, I
= 13 V, I
= 10 V, R
= 13 V, I
2
DS
Test Conditions
GS
, I
S
S
D
= 10 V.
D
D
D
D
D
= 16.7 A
= 2 A
GS
DS
GS
D
= 16.7 A
= 250 μA
GEN
GS
= 16.7A,
= 16.7 A
= 16.7 A,T
= 16.7 A
= 13.6 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 Ω
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
1.2
0.1
25
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
1348
Typ
372
1.7
4.0
6.0
5.4
0.9
8.8
1.6
9.5
3.9
2.5
0.8
0.7
19
58
79
20
20
22
-5
2
7
1795
θCA
Max
495
120
100
www.fairchildsemi.com
2.9
1.3
1.2
2.5
5.0
7.5
7.0
18
10
36
10
28
13
39
14
1
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
nC
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
Ω
V
V
V
S