FDD86252 Fairchild Semiconductor, FDD86252 Datasheet
FDD86252
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FDD86252 Summary of contents
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... TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDD86252 FDD86252 ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 4 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...
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... TJC TJA 2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ° 3: Starting mH ©2011 Fairchild Semiconductor Corporation FDD86252 Rev °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 ° ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86252 Rev °C unless otherwise noted 5 4 Figure 2 ...
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... SINGLE PULSE T = MAX RATED 1 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward BiasSafe Operating Area ©2011 Fairchild Semiconductor Corporation FDD86252 Rev °C unless otherwise noted J 1000 = 100 V = 100 0 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 13. Junction-to-Case Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD86252 Rev °C unless otherwise noted J SINGLE PULSE 1.4 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...