FDMC2512SDC Fairchild Semiconductor, FDMC2512SDC Datasheet - Page 7

• Manufacturer Part Number: FDMC2512SDC
• Manufacturer: Fairchild Semiconductor

©2010 Fairchild Semiconductor Corporation
FDMC2512SDC Rev.C2
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMC2512SDC.
diode reverse recovery characteristic
30
25
20
15
10
Figure 14. FDMC2512SDC SyncFET body
-5
5
0
0
50
TIME (ns)
100
di/dt = 300 A/
(continued)
μ
150
s
200
7
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
0
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
20
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