FDD86110 Fairchild Semiconductor, FDD86110 Datasheet
FDD86110
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FDD86110 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86110 FDD86110 ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C ® MOSFET General Description This N-Channel = 12 Semiconductor‘s advanced Power Trench = 9.8 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. ° 3: Starting 0.3 mH ©2011 Fairchild Semiconductor Corporation FDD86110 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...
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... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86110 Rev °C unless otherwise noted 5 μ 4 ...
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... MAX RATED 0.98 C/W θ 0.5 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD86110 Rev °C unless otherwise noted J 5000 1000 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 13. ©2011 Fairchild Semiconductor Corporation FDD86110 Rev °C unless otherwise noted J SINGLE PULSE 0.98 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Case Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD86110 Rev.C PDP SPM™ Power-SPM™ ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...