FDMB2307NZ Fairchild Semiconductor, FDMB2307NZ Datasheet

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FDMB2307NZ

Manufacturer Part Number
FDMB2307NZ
Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMB2307NZ Rev.C5
FDMB2307NZ
Dual Common Drain N-Channel PowerTrench
20 V, 9.7 A, 16.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
S1S2
S1S2
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x3 mm
HBM ESD protection level > 2 kV (Note 3)
RoHS Compliant
, T
Symbol
Device Marking
STG
S1S2(on)
S1S2(on)
S1S2(on)
S1S2(on)
307
Top
= 16.5 mΩ at V
= 18 mΩ at V
= 21 mΩ at V
= 24 mΩ at V
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient(Dual Operation)
Thermal Resistance, Junction to Ambient(Dual Operation)
Pin 1
GS
GS
GS
MLP 2x3
FDMB2307NZ
GS
= 4.2 V, I
= 3.1 V, I
= 2.5 V, I
Device
= 4.5 V, I
D
D
D
Pin 1
D
= 7.4 A
= 7 A
= 6.7 A
T
= 8 A
A
S2
= 25°C unless otherwise noted
-Pulsed
Parameter
S2
Bottom
S1
D1/D2
Package
MLP 2x3
G2
S1
1
G1
T
T
T
A
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench
MicroFET Leadframe, the FDMB2307NZ minimizes both PCB
space and r
Application
A
A
= 25°C
= 25 °C
= 25 °C
Li-Ion Battery Pack
Reel Size
S1S2(on)
G2
S2
S2
7’’
®
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
.
MOSFET
4
5
6
Tape Width
8 mm
®
-55 to +150
process with state of the art
Ratings
161
±12
9.7
2.2
0.8
20
57
40
3
1
2
October 2011
www.fairchildsemi.com
3000 units
Quantity
G1
S1
S1
Units
°C/W
°C
W
V
V
A

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FDMB2307NZ Summary of contents

Page 1

... Li-Ion battery pack protection circuit and other ultra-portable D applications. It features two common drain N-channel = MOSFETs, which enables bidirectional current flow 6 Fairchild’s advanced PowerTrench MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and r S1S2(on) Application Li-Ion Battery Pack Pin 1 ...

Page 2

... The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev. 25°C unless otherwise noted ...

Page 3

... Drain Current and Gate Voltage 1 S1S2 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE ( , T J Figure 5. Normalized On Resistance vs Junction Temperature ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev. 25°C unless otherwise noted 3.1 V G1S1 = 2.5 V G1S1 μ 4.5 V 0.6 0 3.1 V G1S1 = 4 4.5 V G1S1 μ 4 ...

Page 4

... - GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev. 25°C unless otherwise noted - 0.001 1.5 2.0 10000 1000 S1S2 = ...

Page 5

... DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev. 25°C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 161 C/W θ RECTANGULAR PULSE DURATION (sec) ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C5 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMB2307NZ Rev.C5 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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