FDMS86320 Fairchild Semiconductor, FDMS86320 Datasheet - Page 4

• Manufacturer Part Number: FDMS86320
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

FDMS86320 Rev.C
Typical Characteristics
0.01
100
0.1
30
10
10
10
8
6
4
2
0
Figure 7.
1
0.01
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
I
D
= 10.5 A
5
V
Switching Capability
0.1
DS
SINGLE PULSE
T
R
T
Gate Charge Characteristics
0.1
t
J
A
AV
θ
, DRAIN to SOURCE VOLTAGE (V)
JA
Operating Area
= MAX RATED
= 25
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
= 125
DS(on)
g
10
, GATE CHARGE (nC)
o
C
o
C/W
T
T
1
V
J
J
DD
= 125
= 25
15
1
= 30 V
o
C
o
T
T
C
J
J
V
10
= 100
= 25 °C unless otherwise noted
DD
20
= 40 V
o
10
C
V
DD
25
100
100 us
100 ms
1 ms
10 s
10 ms
1 s
DC
= 50 V
100
500
30
4
3000
1000
1000
100
100
0.5
60
50
40
30
20
10
10
10
Figure 10.
0
5
1
10
0.1
25
Figure 12.
-4
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
-3
V
50
V
DS
GS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
= 8 V
C
10
Single Pulse Maximum
R
, C
Capacitance vs Drain
t, PULSE WIDTH (sec)
θ
-2
JC
ASE TEMPERATURE (
1
= 1.8
75
10
-1
o
V
C/W
GS
= 10 V
100
1
10
SINGLE PULSE
R
T
10
A
o
θ
C )
JA
= 25
C
C
C
125
= 125
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o
100
C
o
C/W
1000
150
100