FDZ663P Fairchild Semiconductor, FDZ663P Datasheet
FDZ663P
Related parts for FDZ663P
FDZ663P Summary of contents
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... General Description = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench D with state of the art "fine pitch" Thin WLCSP packaging process the FDZ663P minimizes both PCB space and advanced WLCSP MOSFET embodies a breakthrough in D packaging technology which enables the device to combine = - excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0 ...
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... R is determined with the device mounted θJA the user's board design °C/W when mounted on 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2011 Fairchild Semiconductor Corporation FDZ663P Rev. °C unless otherwise noted J Test Conditions = -250 μ ...
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... DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDZ663P Rev. °C unless otherwise noted J μ 600 450 300 150 50 75 100 125 150 0. ...
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... Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDZ663P Rev. °C unless otherwise noted J 2000 1000 100 1000 100 100 100 ms ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDZ663P Rev.C1 5 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDZ663P Rev.C1 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...