FDMS3626S Fairchild Semiconductor, FDMS3626S Datasheet - Page 8

• Manufacturer Part Number: FDMS3626S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3626S Rev.C2
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
100
10
200
100
0.1
10
8
6
4
2
0
10
Figure 20. Gate Charge Characteristics
0.001
1
1
0.01
0
I
D
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
= 25 A
J
A
θ
Figure 24. Forward Bias Safe
JA
5
= MAX RATED
= 25
= 120
0.01
V
o
T
Switching Capability
10
C
DS
V
J
t
DD
= 125
o
0.1
AV
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
DS
Q
, TIME IN AVALANCHE (ms)
= 10 V
g
(
15
on
, GATE CHARGE (nC)
o
)
C
0.1
20
V
DD
1
= 15 V
T
25
J
= 25
1
V
30
o
DD
C
T
J
= 13 V
= 100
10
35
10
o
C
40
DC
100
100 ms
1 ms
10 ms
1s
10s
μ
s
45
100
100
8
T
J
= 25°C unless otherwise noted
10000
3000
1000
Figure 23. Maximum Continuous Drain
1000
100
120
100
Figure 25. Single Pulse Maximum Power
0.5
100
80
60
40
20
10
10
10
0
1
25
0.1
-4
Figure 21. Capacitance vs Drain
Limited by Package
f = 1 MHz
V
Current vs Case Temperature
GS
R
V
10
θ
JC
GS
= 0 V
-3
= 3.0
= 4.5 V
V
50
DS
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
10
t, PULSE WIDTH (sec)
o
C
C/W
,
V
Dissipation
-2
CASE TEMPERATURE (
GS
= 10 V
75
10
1
-1
1
100
SINGLE PULSE
R
θ
10
JA
o
www.fairchildsemi.com
C )
= 120
125
10
100
o
C
C
C
C/W
iss
oss
rss
1000
150
30