FDMS86540 Fairchild Semiconductor, FDMS86540 Datasheet

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FDMS86540

Manufacturer Part Number
FDMS86540
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
FDMS86540
N-Channel PowerTrench
60 V, 50 A, 3.4 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86540
DS(on)
DS(on)
generation
= 3.4 mΩ at V
= 4.1 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
GS
GS
FDMS86540
= 10 V, I
= 8 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
body
D
D
= 18.5 A
= 20 A
diode
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
Power 56
DS(on)
Package
1
S
T
T
T
S
T
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
S
G
S
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
±20
126
120
228
1.3
2.5
60
50
20
96
50
December 2011
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86540 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86540 FDMS86540 ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev. C ® MOSFET General Description = 20 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node = 18 ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev °C unless otherwise noted μ 5 100 125 150 ...

Page 4

... MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev °C unless otherwise noted J 10000 100 C J ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86540 Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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