KST05 Fairchild Semiconductor, KST05 Datasheet
KST05
Manufacturer Part Number
KST05
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KST05.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KST05MTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Driver Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KST55/56
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
Marking Code
V
V
V
I
P
T
R
BV
BV
I
I
h
V
V
f
C
CBO
CEO
T
Symbol
FE
STG
CBO
CEO
EBO
C
CE
BE
TH
CEO
EBO
Symbol
(j-a)
(on)
(sat)
Type
Mark
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collecto-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
CEO
C
= KST05: 60V
(max) = 350mW
KST06: 80V
KST05
: KST05
: KST06
: KST05
: KST06
T
1H
a
=25 C unless otherwise noted
T
: KST05
: KST06
: KST05
: KST06
Parameter
a
=25 C unless otherwise noted
KST05/06
I
I
V
V
V
V
V
I
V
V
C
E
C
CB
CB
CE
CE
CE
CE
CE
=1mA, I
=100 A, I
=100mA, I
=60V, I
=80V, I
=60V, I
=1V, I
=1V, I
=1V, I
=2V, I
Test Condition
KST06
B
C
C
C
C
=0
E
E
B
=10mA
=100mA
=100mA
=100mA, f=100MHz
1G
C
=0
=0
=0
B
=0
=10mA
1. Base 2. Emitter 3. Collector
3
Value
500
350
150
357
60
80
60
80
4
Min.
100
60
80
50
50
4
Marking
1
SOT-23
Max.
0.25
1H
0.1
0.1
0.1
1.2
Rev. A2, November 2002
2
Units
mW
mA
C/W
V
V
V
V
V
C
Units
MHz
V
V
V
V
V
A
A
A
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KST05 Summary of contents
Page 1
... Driver Transistor • Collector-Emitter Voltage KST05: 60V CEO • Collector Power Dissipation: P (max) = 350mW C • Complement to KST55/56 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol V Collecto-Base Voltage CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current C P Collector Power Dissipation C T Storage Temperature ...
Page 2
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, November 2002 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...