KSP42 Fairchild Semiconductor, KSP42 Datasheet
KSP42
Manufacturer Part Number
KSP42
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSP42.pdf
(4 pages)
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©2002 Fairchild Semiconductor Corporation
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
C
f
C
CBO
EBO
T
FE
CBO
CEO
EBO
C
J
STG
Symbol
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
* Collector -Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CEO
Parameter
C
=KSP42: 300V
(max)=625mW
KSP43: 200V
: KSP42
: KSP43
: KSP42
: KSP43
: KSP42
: KSP43
: KSP42
: KSP43
: KSP42
: KSP43
T
a
=25 C unless otherwise noted
T
: KSP42
: KSP43
: KSP42
: KSP43
Parameter
a
=25 C unless otherwise noted
KSP42/43
I
I
I
V
V
V
V
V
V
V
V
f=1MHz
f=100MHz
I
I
V
C
C
E
C
C
CB
CB
BE
BE
CE
CE
CE
CB
CE
=100 A, I
=1mA, I
=100 A, I
=20mA, I
=20mA, I
=6V, I
=4V, I
=200V, I
=160V, I
=10V, I
=10V, I
=10V, I
=20V, I
=20V, I
Test Condition
B
C
C
=0
=0
=0
C
C
C
B
B
E
C
E
C
=2mA
=2mA
=0
E
E
=1mA
=10mA
=30mA
=10mA
=0
=0
=0
=0
1. Emitter 2. Base 3. Collector
1
-55 ~ 150
Value
300
200
300
200
500
625
150
6
Min.
300
200
300
200
25
40
40
50
6
TO-92
Max.
100
100
100
100
0.5
0.9
3
4
Rev. A2, September 2002
Units
mW
mA
V
V
V
V
V
C
C
Units
MHz
nA
nA
nA
nA
pF
pF
V
V
V
V
V
V
V
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KSP42 Summary of contents
Page 1
... Parameter : KSP42 : KSP43 : KSP42 : KSP43 T =25 C unless otherwise noted a Test Condition I =100 KSP42 : KSP43 I =1mA KSP42 : KSP43 I =100 KSP42 V =200V KSP43 V =160V KSP42 V =6V KSP43 V =4V =10V, I =1mA ...
Page 2
... Typical Characteristics 1000 V = 10V CE 100 [mA], COLLECTOR CURRENT C Figure 1. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector-Base Capacitance ©2002 Fairchild Semiconductor Corporation 10 1 0.1 0.01 100 1 Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 120 1MHz 100 100 Figure 4 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...