KSA708 Fairchild Semiconductor, KSA708 Datasheet
KSA708
Manufacturer Part Number
KSA708
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSA708.pdf
(4 pages)
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©2001 Fairchild Semiconductor Corporation
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSC1008
• Collector-Base Voltage : V
• Collector Power Dissipation : P
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 350 s, Duty cycle 2%
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
CBO
= -80V
C
=800mW
T
a
=25 C unless otherwise noted
40 ~ 80
T
Parameter
a
R
=25 C unless otherwise noted
KSA708
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
= -100 A, I
= -100 A, I
= -10mA, I
= -500mA, I
= -500mA, I
= -5V, I
= -60V, I
= -2V, I
= -10V, I
= -10V, I
Test Condition
C
C
E
=0
C
E
B
= -50mA
C
E
=0
=0
=0, f=1MHz
B
B
= -50mA
=0
=0
= -50mA
= -50mA
70 ~ 140
O
1. Emitter 2. Base 3. Collector
1
Min.
-80
-60
40
-8
-55 ~ 150
Ratings
-700
800
150
-80
-60
-8
Typ.
-0.3
-0.9
50
13
TO-92
120 ~ 240
Max.
-0.1
-0.1
-0.7
240
1.1
Y
Rev. A1, August 2001
Units
mW
mA
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A
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KSA708 Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty cycle 2% h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSA708 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA, I ...
Page 2
... BE -0.1 V (sat) CE -0.01 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2001 Fairchild Semiconductor Corporation 1000 = -1.6mA = -1.4mA I = -1.2mA -1.0mA B 100 I = -0.8mA -0.6mA -0.4mA -0.2mA ...
Page 3
... Package Demensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2001 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, August 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...