FJX945 Fairchild Semiconductor, FJX945 Datasheet
FJX945
Manufacturer Part Number
FJX945
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJX945.pdf
(4 pages)
©2004 Fairchild Semiconductor Corporation
Audio Frequency Amplifier
High Frequency OSC.
• Collector-Base Voltage V
• High Current Gain Bandwidth Product f
• Complement to FJX733
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
f
C
NF
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
CBO
Parameter
=60V
70 ~ 140
T
T
O
a
=300MHz (Typ)
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
FJX945
S A X
I
I
I
V
V
V
I
V
V
f=1MHz
V
f=1KHz, R
C
C
E
C
CB
EB
CE
CE
CB
CE
=10 A, I
=100 A, I
=10mA, I
=100mA, I
=3V, I
=40V, I
=6V, I
=6V, I
=6V, I
=6V, I
120 ~ 240
Test Condition
Y
C
C
C
E
E
C
S
B
E
=0
=0
= -0.5mA
=1.0mA
=10mA
=0
=500
E
=0
=0
B
=0
Grade
=10mA
200 ~ 400
1. Base 2. Emitter 3. Collector
Min.
60
50
70
5
G
-55 ~ 150
3
Value
150
200
150
60
50
5
Typ.
0.15
300
2.5
4.0
1
Max.
350 ~ 700
700
0.1
0.1
0.3
SOT-323
L
2
Units
mW
mA
Rev. B2, April 2004
V
V
V
C
C
Units
MHz
pF
dB
V
V
V
V
A
A
Related parts for FJX945
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FJX945 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob NF Noise Figure h Classification FE Classification h FE ©2004 Fairchild Semiconductor Corporation FJX945 =300MHz (Typ =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =10mA, I ...
Page 2
... CE Figure 1. Static Characteristic 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation 100 I = 250 200 150 100 0 ...
Page 3
... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2004 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. B2, April 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...