2N5210 Fairchild Semiconductor, 2N5210 Datasheet
2N5210
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2N5210 Summary of contents
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... Thermal Resistance, Junction to Ambient R JA 2002 Fairchild Semiconductor Corporation 2N5210/MMBT5210 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N5210 625 5.0 83.3 200 C E TO-92 SOT-23 B Mark: 3M Value Units 4.5 V 100 mA -55 to +150 C Max. Units MMBT5210 350 mW 2.8 mW/ C C/W 357 C/W 2N5210, Rev B ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 1200 o 125 C 1000 800 600 400 200 0 0.3 3 0.01 0.03 0 COLLECTOR CURRENT ( Base-Emitter ...
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Typical Characteristics Input and Output Capacitance vs Reverse Bias Voltage REVERSE BIAS VOLTAGE (V) Normalized Collector-Cutoff Current vs Ambient Temperature 1000 100 100 ...
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Typical Characteristics Contours of Constant Narrow Band Noise Figure 10,000 5,000 2,000 1,000 500 100 Hz BANDWIDTH 200 = 20 Hz 100 1 10 100 I - COLLECTOR CURRENT ( C Contours of ...
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Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 1.3 h 1 COLLECTOR VOLTAGE (V) CE Typical Common Emitter Characteristics 100 f = ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...