This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Parameter I Collector Cut-off Current CES I Emitter Cut-off Current EBO h *DC Current Gain FE : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 V (sat) *Collector-Emitter Saturation Voltage CE : KSE44H KSE44H 2, 5, 8,11 V (sat) *Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...