KSE45H Fairchild Semiconductor, KSE45H Datasheet

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KSE45H

Manufacturer Part Number
KSE45H
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage: V
• Fast Switching Speeds
• Complement to KSE44H
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, Duty cycle 2%
C
t
t
t
V
V
I
I
P
P
T
T
I
I
h
V
V
f
ON
STG
F
C
CP
CES
EBO
T
FE
J
STG
CEO
EBO
C
C
CE
BE
ob
Symbol
Symbol
(sat)
(sat)
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
: KSE45H 1, 4, 7 10
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
: KSE45H 2, 5, 8,11
a
C
T
=25 C)
=25 C)
C
=25 C unless otherwise noted
Parameter
KSE45H Series
T
CE
C
=25 C unless otherwise noted
(sat) = -1V (MAX)@-8A
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
: KSE45H 1,2
V
V
V
I
I
I
V
V
V
I
C
C
C
B1
CE
CE
EB
CE
CB
CC
= - 8A, I
= - 8A, I
= - 8A, I
= - I
= - 1V, I
= - 5V, I
= Rated, V
= - 10V, I
= - 10V, f = 1MHz
=20V, I
Test Condition
B2
= - 0.5A
B
B
B
C
C
= - 0.8A
= - 0.4A
= - 0.8A
C
= - 2A
= - 5A
C
= 0
CEO
= - 0.5A
, V
EB
= 0
1.Base
1
Min.
35
60
- 55 ~ 150
2.Collector
Value
1.67
- 10
- 30
- 45
- 60
- 80
- 20
150
- 5
50
Typ.
230
135
500
100
40
TO-220
Max.
-100
-1.5
3.Emitter
-10
-1
-1
Rev. A1, June 2001
Units
W
W
V
V
V
V
V
A
A
Units
C
C
MHz
pF
ns
ns
ns
V
V
V
A
A

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KSE45H Summary of contents

Page 1

... Storage Temperature STG Electrical Characteristics Symbol Parameter I Collector Cut-off Current CES I Emitter Cut-off Current EBO h *DC Current Gain FE : KSE45H KSE45H 2, 5, 8,11 V (sat) *Collector-Emitter Saturation Voltage CE : KSE45H KSE45H 2, 5, 8,11 V (sat) *Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product ...

Page 2

... COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation - -0.1 -0.01 -1 -10 -0.01 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 f=1MHZ 10 1 0.1 -100 1 Figure 4. Safe Operating Area 125 ...

Page 3

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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