KSB772 Fairchild Semiconductor, KSB772 Datasheet

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KSB772

Manufacturer Part Number
KSB772
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%
h
R
R
V
I
I
I
P
h
V
V
T
T
I
I
h
V
V
f
C
FE
C
CP
B
Symbol
CBO
EBO
T
FE1
FE2
EBO
C
J
STG
CBO
CEO
CE
BE
ob
ja
jc
(sat)
Symbol
(sat)
Classificntion
Classification
h
FE2
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Collector Dissipation (T
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Parameter
60 ~ 120
T
R
C
=25 C unless otherwise noted
a
C
T
Parameter
=25 C)
=25 C)
C
=25 C unless otherwise noted
KSB772
V
V
V
V
I
I
V
V
f = 1MHz
C
C
CB
EB
CE
CE
CE
CB
= - 2A, I
= - 2A, I
100 ~ 200
Test Condition
= - 30V, I
= - 3V, I
= - 2V, I
= - 2V, I
= - 5V, I
= - 10V, I
O
B
B
C
= - 0.2A
= - 0.2A
C
C
E
E
E
= 0
= - 0.1A
= - 20mA
= - 1A
= 0
= 0
1
1. Emitter
160 ~ 320
Min.
30
60
Y
- 55 ~ 150
Value
- 0.6
13.5
132
150
- 40
- 30
- 5
- 3
- 7
10
1
Typ.
- 0.3
- 1.0
220
160
2.Collector
80
55
TO-126
Max.
- 0.5
- 2.0
400
200 ~ 400
- 1
- 1
3.Base
G
Rev. B, October 2002
Units
C/W
C/W
W
W
V
V
V
A
A
A
C
C
Units
MHz
pF
V
V
A
A

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KSB772 Summary of contents

Page 1

... Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty Cycle 2% h Classificntion FE Classification h FE2 ©2002 Fairchild Semiconductor Corporation KSB772 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 30V ...

Page 2

... -10 -100 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 1 -0.01 -0.1 I [A], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation 1000 100 I = -4mA -3mA -2mA -1mA -12 -16 -20 ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2002 Fairchild Semiconductor Corporation (Continued 125 150 175 200 100 125 150 175 200 C], CASE TEMPERATURE C Figure 8 ...

Page 4

... Package Dimensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2002 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. B, October 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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