MJD112 Fairchild Semiconductor, MJD112 Datasheet
MJD112
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MJD112 Summary of contents
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... Base-Emitter Saturation Voltage BE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation MJD112 Rev. B Equivalent Circuit B D-PAK 3.Emitter ≅ R1 10kΩ ≅ R2 0.6kΩ 25°C unless otherwise noted a Parameter =25° ...
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... C Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10 t STG 1 t 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time MJD112 Rev 0. Figure 2. Base-Emitter Saturation Voltage 10 100 V =30V CC I =250I 0. 250 I ...
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... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 1. Power Derating MJD112 Rev. B (Continued) 125 150 175 3 www.fairchildsemi.com ...
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... Mechanical Dimensions (0.50) MAX0.96 2.30TYP [2.30±0.20] MJD112 Rev. B D-PAK 6.60 ±0.20 ±0.30 5.34 (4.34) (0.50) ±0.10 0.76 2.30TYP [2.30±0.20] 6.60 ±0.20 (5.34) (5.04) (1.50) (2XR0.25) 4 2.30 ±0.10 0.50 ±0.10 ±0.10 0.50 ±0.20 1.02 ±0.20 2.30 0.76 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MJD112 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...