FJP3307D Fairchild Semiconductor, FJP3307D Datasheet
FJP3307D
Related parts for FJP3307D
FJP3307D Summary of contents
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... Collector-Emitter Breakdown Voltage CEO BV Emitter-Base Breakdown Voltage EBO I Emitter Cut-off Current EBO h DC Current Gain FE1 h FE2 V Collector-Emitter Saturation Voltage CE(sat) © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A TO-220 3.Emitter Parameter = 25° 25°C unless otherwise noted C Conditions I = 500μ 5mA, I ...
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... Storage Time STG t Fall Time F t Storage Time STG t Fall Time F * Pulse test 300 μ s, Duty cycl Classification FE Classification h FE1 © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A Conditions Min 10V 1MHz CB E ...
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... 125 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A Figure 2. DC Current Gain (H1 Grade) 100 I =300mA =100mA B I =50mA 0.1 Figure 4. Collector-Emitter Saturation Voltage ...
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... Pulse (MAX 0 Single Pulse 0. [V], COLLECTOR-EMITTER VOLTAGE CE © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A (Continued) Figure 8. Reverse Biased Safe Operating Area 100 1mH 0.1 125 150 175 200 10 μ μ 100 s 1ms ...
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... Mechanical Dimensions © 2008 Fairchild Semiconductor Corporation FJP3307D Rev. A TO220 5 www.fairchildsemi.com ...
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... Fairchild Semiconductor Corporation FJP3307D Rev. A www.fairchildsemi.com 6 ...