SGL50N60RUFD Fairchild Semiconductor, SGL50N60RUFD Datasheet - Page 4

• Manufacturer Part Number: SGL50N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
7000
6000
5000
4000
3000
2000
1000
1000
1000
100
100
10
0
10
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
C
C
CC
= 50A
Gate Resistance
C
C
GE
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 25℃ ━━
= 125℃ ------
20
= ± 15V, R
1
Collector - Emitter Voltage, V
Cies
Coes
Cres
GE
Gate Resistance, R
G
= ± 15V
= 5.9
Collector Current, I
40
10
60
G
C
10
[ ]
Common Emitter
V
T
[A]
C
GE
= 25℃
CE
= 0V, f = 1MHz
80
[V]
100
Toff
Toff
Tf
Tf
Ton
Tr
100
10000
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
1000
100
100
10
Toff
Toff
Tf
Tf
Common Emitter
V
I
T
T
C
Common Emitter
V
I
T
T
Gate Resistance
C
C
C
CC
= 50A
CC
C
C
= 50A
= 25℃ ━━
= 125℃ ------
= 25℃ ━━
= 125℃ ------
Collector Current
= 300V, V
= 300V, V
20
GE
GE
Gate Resistance, R
Gate Resistance, R
= ± 15V
= ± 15V
Collector Current, I
40
10
10
60
Common Emitter
V
T
T
GE
C
C
G
= 25℃ ━━
= 125℃ ------
G
= ± 15V, R
C
[ ]
[ ]
[A]
80
100
G
SGL50N60RUFD Rev. A1
= 5.9
Ton
Tr
Eoff
Eoff
Eon
100
100