SGL50N60RUFD Fairchild Semiconductor, SGL50N60RUFD Datasheet - Page 3

• Manufacturer Part Number: SGL50N60RUFD
• Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
140
120
100
80
60
40
20
20
16
12
0
5
4
3
2
1
0
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
V
C
Common Emitter
T
GE
Temperature at Variant Current Level
= 25℃
C
= 15V
= 25℃
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
0
Case Temperature, T
I
C
= 30A
20V
8
50
4
15V
50A
12
100A
C
GE
[ ℃ ]
GE
100
CE
[V]
6
[V]
16
V
GE
I
C
12V
= 10V
= 30A
100A
50A
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
140
120
100
80
60
40
20
20
16
12
60
50
40
30
20
10
0
8
4
0
0
0
Duty cycle : 50%
T
Power Dissipation = 70W
Common Emitter
V
T
T
Common Emitter
T
C
GE
C
C
C
= 100℃
= 25℃ ━━
= 125℃ ------
1
= 125℃
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
C
= 30A
Frequency [KHz]
10
8
V
Load Current : peak of square wave
CC
= 300V
50A
12
100A
100
GE
GE
CE
[V]
[V]
16
10
SGL50N60RUFD Rev. A1
1000
20