HGTD1N120BNS Fairchild Semiconductor, HGTD1N120BNS Datasheet
HGTD1N120BNS
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HGTD1N120BNS Summary of contents
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... PART NUMBER PACKAGE HGTD1N120BNS TO-252AA HGTP1N120BN TO-220AB NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A Symbol FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 ...
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... 150 2 150 C - 3.8 C 6.0 7 15V 9 15V - 20V - 15 GE HGTD1N120BNS, HGTP1N120BN Rev. B UNITS µ s µ s MAX UNITS - µ A 250 µ 1.0 mA 2 ± 250 ...
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... IGBT. The diode type is specified in Figure 18 150 82Ω 15V 2mH 200 400 600 800 1000 V , COLLECTOR TO EMITTER VOLTAGE (V) CE HGTD1N120BNS, HGTP1N120BN Rev. B MAX UNITS 300 ns - µJ 187 µJ 123 µ ...
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... R = 82Ω 4mH 960V G CE 200 150 13V OR 15V J GE 150 100 50 0 0 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTD1N120BNS, HGTP1N120BN Rev 150 15V 13V OR 15V GE 2.5 3 ...
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... I , COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 800V 400V 1mA, R G(REF GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS HGTD1N120BNS, HGTP1N120BN Rev 15V GE 2 960V CE 2 1200V 600Ω ...
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... DUTY FACTOR PEAK θ 90% E OFF I CE 90 d(OFF)I FIGURE 19. SWITCHING TEST WAVEFORMS HGTD1N120BNS, HGTP1N120BN Rev 12V 10V θ 10% E ON2 d(ON ...
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... )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in ; i.e., the collector current equals OFF = 0). HGTD1N120BNS, HGTP1N120BN Rev d(OFF)I ). The ON2 - T )/R . θJC C ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...