SGF23N60UF Fairchild Semiconductor, SGF23N60UF Datasheet
SGF23N60UF
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SGF23N60UF Summary of contents
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... C unless otherwise noted C Description @ 100 100 C C Parameter October 2001 IGBT = 2 12A CE(sat SGF23N60UF Units 600 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.6 C C/W SGF23N60UF Rev. A ...
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... Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 4.5 6.5 V 2.1 2 720 -- pF 100 -- 130 ns 70 150 ns 115 -- uJ 135 -- uJ 250 400 100 200 ns 220 250 ns 205 -- uJ 320 -- uJ 525 800 SGF23N60UF Rev. A ...
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... GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] Common Emitter T = 125℃ C 24A 12A Gate - Emitter Voltage SGF23N60UF Rev. A ...
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... Eoff Common Emitter = ± 15V V = 300V 12A 25℃ 125℃ 100 Gate Resistance ± 15V = 300V 25℃ 125℃ Toff Collector Current, I [A] C Collector Current SGF23N60UF Rev. A 200 200 24 ...
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... Fig 17. Transient Thermal Impedance of IGBT = 25℃ C 300 V 200 100 Gate Charge Safe Operating Area V = 20V 100℃ 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGF23N60UF Rev 1000 ...
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... Package Dimension 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters SGF23N60UF Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...