FGA20N120FTD Fairchild Semiconductor, FGA20N120FTD Datasheet

no-image

FGA20N120FTD

Manufacturer Part Number
FGA20N120FTD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA20N120FTDTU
Manufacturer:
ST
Quantity:
2 000
Part Number:
FGA20N120FTDTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2007 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
FGA20N120FTD
1200V, 20A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
• Induction heating and Microvewave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
C
CE(sat)
E
=1.6V @ I
Description
Parameter
TO-3PN
C
= 20A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
298
300
119
40
20
60
20
Max.
0.42
2.0
C
E
40
December 2007
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

Related parts for FGA20N120FTD

FGA20N120FTD Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FGA20N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V = 20A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggedness ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA20N120FTD Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 1mA ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGA20N120FTD Rev 25°C unless otherwise noted C Test Conditions Min 20A 125 ...

Page 4

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Common Emitter V = 15V GE 2.4 2.0 1.6 1 Collector-EmitterCase Temperature, T FGA20N120FTD Rev. A Figure 2. Typical Output Characteristics 180 17V 15V 150 120 90 12V 60 10V = 0.0 6.0 7.5 9.0 [V] CE Figure 4. Transfer Characteristics 120 ...

Page 5

... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 300 100 d(on Gate Resistance, R FGA20N120FTD Rev. A Figure 8. Capacitance Characteristics GE 5000 Common Emitter 125 C C 4000 3000 2000 20A 1000 40A [V] GE Figure 10. SOA Characteristics ...

Page 6

... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 80 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA20N120FTD Rev. A Figure 14. Turn-off Characteristics vs. 1000 t r 100 t d(on [A] C Figure 16. Switching Loss vs. Collector Current 10 E off ...

Page 7

... Forward Current, I Figure 21.Reverse Recovery Time 1000 800 di/dt = 100A/ 600 200A/ 400 200 Forward Current 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA20N120FTD Rev. A Figure 20. Stored Charge 15000 12000 µ 200A/ s 9000 6000 µ di/dt = 100A/ s 3000 [A] F µ s µ [A] F Figure 22.Transient Thermal Impedance of IGBT ...

Page 8

... Mechanical Dimensions FGA20N120FTD Rev. A TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA20N120FTD Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

Related keywords