FGA15N120FTD Fairchild Semiconductor, FGA15N120FTD Datasheet
FGA15N120FTD
Available stocks
Related parts for FGA15N120FTD
FGA15N120FTD Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V = 15A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggeness ...
Page 2
... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA15N120FTD Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 1mA ...
Page 3
... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cyrrent rr Q Diode Reverse Recovery Charge rr FGA15N120FTD Rev 25°C unless otherwise noted C Test Conditions Min 15A 125 ...
Page 4
... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Common Emitter V = 15V GE 2.4 2.0 1.6 1 Collector-EmitterCase Temperature, T FGA15N120FTD Rev. A Figure 2. Typical Output Characteristics 120 90 12V 60 10V [V] CE Figure 4. Transfer Characteristics 100 ...
Page 5
... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 300 100 t r Common Emitter t V d(on Gate Resistance, R FGA15N120FTD Rev. A Figure 8. Capacitance Characteristics GE 4000 Common Emitter 125 C C 3000 2000 1000 30A [V] GE Figure 10. SOA Characteristics 200 100 ...
Page 6
... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 80 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA15N120FTD Rev. A Figure 14. Turn-off Characteristics vs. 1000 t r 100 t d(on [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 ...
Page 7
... Forward Current, I Figure 21.Reverse Recovery Time 800 µ di/dt = 100A/ s 600 200A/ 400 200 Forward Current 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA15N120FTD Rev. A Figure 20. Stored Charge 14000 12000 µ s 10000 8000 µ di/dt = 100A/ s 6000 4000 2000 [A] F µ [A] F Figure 22.Transient Thermal Impedance of IGBT ...
Page 8
... Mechanical Dimensions FGA15N120FTD Rev. A TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...
Page 9
... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA15N120FTD Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource POWEREDGE Green FPS™ Power-SPM™ Green FPS™ e-Series™ ...