FGH80N60FD2 Fairchild Semiconductor, FGH80N60FD2 Datasheet

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FGH80N60FD2

Manufacturer Part Number
FGH80N60FD2
Description
Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential
Manufacturer
Fairchild Semiconductor
Datasheet
©2009 Fairchild Semiconductor Corporation
FGH80N60FD Rev. A2
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGH80N60FD2
600V, 80A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating Application
V
V
I
I
P
T
T
T
R
R
R
C
CM (1)
stg
J
L
CES
GES
D
JC
JC
JA
Symbol
Symbol
(IGBT)
(Diode)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
CE(sat)
=1.8V @ I
E
COLLECTOR
Description
C
(FLANGE)
Parameter
G
C
= 40A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
1
= 25C
= 100C
= 25C
= 100C
C
= 25C
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
Typ.
--
--
G
-55 to +150
-55 to +150
Ratings
 20
600
160
290
300
116
80
40
Max.
0.43
1.45
40
E
C
November
www.fairchildsemi.com
Units
Units
C/W
C/W
C/W
C
C
C
W
W
V
V
A
A
A
tm

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FGH80N60FD2 Summary of contents

Page 1

... FGH80N60FD2 600V, 80A Field Stop IGBT Features • High current capability • Low saturation voltage: V =1. CE(sat) • High input impedance • Fast switching • RoHS compliant Applications • Induction Heating Application Absolute Maximum Ratings Symbol V Collector-Emitter Voltage CES V Gate-Emitter Voltage ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGH80N60FD2 FGH80N60FD2TU Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector-Emitter Breakdown Voltage CES BV / Temperature Coefficient of Breakdown CES T Voltage J I Collector Cut-Off Current CES I G-E Leakage Current GES On Characteristics V G-E Threshold Voltage GE(th) V Collector to Emitter ...

Page 3

Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGH80N60FD Rev 25°C unless otherwise noted C ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 160 15V C 20V 12V 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteritics 160 Common Emitter V = 15V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge 40A 20A Gate-Emitter Voltage, V Figure 9. Gate Charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-Off Characteristics vs. Gate Resistance 2000 Common Emitter V = 400V 15V CC GE 1000 I = 40A 125 C C 100 10 ...

Page 7

Typical Performance Characteristics Figure 18. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 Figure 19. Typical Forward Voltage Drop 125 ...

Page 8

Mechanical Dimensions TO-247AD (FKS PKG CODE 001) FGH80N60FD Rev www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GOT™ CorePLUS™ i-Lo™ ...

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