FGH20N60UFD Fairchild Semiconductor, FGH20N60UFD Datasheet - Page 2

• Manufacturer Part Number: FGH20N60UFD
• Manufacturer: Fairchild Semiconductor

FGH20N60UFD Rev. A1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
DBV
DT
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
FGH20N60UFD
J
CES
CES
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
FGH20N60UFDTU
Parameter
Device
Package
TO-247
V
V
V
I
I
I
T
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
C
C
C
C
GE
GE
CE
GE
CE
CC
G
CC
G
CE
GE
= 20A
= 20A
= 250mA, V
= 125
= 10W, V
= 10W, V
= 30V
= 0V, I
= 0V, I
= V
= V
= 400V, I
= 400V, I
= 400V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
o
= 25°C unless otherwise noted
V
V
C
,
GE
GE
2
C
C
V
, V
, V
GE
GE
GE
= 250mA
= 250mA
C
C
C
CE
= 15V
= 15V,
GE
CE
= 20A,
= 20A,
= 20A,
= 15V,
= 15V,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
Type
GE
Tube
o
C
o
C
Qty per Tube
Min.
600
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30ea
Typ.
0.38
0.26
0.64
0.41
0.36
0.77
940
110
0.6
5.0
1.8
2.0
40
13
17
87
32
13
16
92
63
63
32
7
-
-
-
Max.
±400
250
6.5
2.4
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Qty
per Box
www.fairchildsemi.com
-
Units
V/
mA
nA
pF
pF
pF
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
o
C