FGH75N60UF Fairchild Semiconductor, FGH75N60UF Datasheet

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FGH75N60UF

Manufacturer Part Number
FGH75N60UF
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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FGH75N60UF
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FGH75N60UFTU
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©2009 Fairchild Semiconductor Corporation
FGH75N60UF Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
JC
JA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
=1.9V @ I
E
COLLECTOR
C
(FLANGE)
Description
Parameter
G
C
= 75A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
 20
600
150
225
452
181
300
75
Max.
0.276
40
April 2009
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGH75N60UF Summary of contents

Page 1

... Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FGH75N60UF Rev. A1 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for = 75A C Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGH75N60UF Rev. A1 Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250 0V 250 ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.6 Common Emitter V = 15V GE 3.0 2.4 1.8 1 Collector-EmitterCase Temperature, T FGH75N60UF Rev. A1 Figure 2. Typical Output Characteristics 225 15V 180 12V 10V 135 0.0 [V] CE Figure 4. Transfer Characteristics 225 ...

Page 4

... Collector-Emitter Voltage, V Figure 11. SOA Characteristics 500 100 10 1 Single Nonrepetitive Pulse 0.1 Curves must be derated linearly with increase in temperature 0. Collector-Emitter Voltage, V FGH75N60UF Rev. A1 Figure 8. Saturation Voltage vs Common Emitter 150A ...

Page 5

... Common Emitter V = 400V 15V 75A 125 Gate Resistance, R FGH75N60UF Rev. A1 Figure 14. Turn-off Characteristics vs. 10000 1000 100 = 400V 15V 75A 125  Figure 16. Turn-off Characteristics vs. 1000 t ...

Page 6

... Figure 19. Turn off Switching SOA Characteristics 500 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V Figure 20. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGH75N60UF Rev. A1 100 1000 [V] CE 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH75N60UF Rev Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFIN ITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH75N60UF Rev. A1 PowerTrench ® PowerXS™ SM Programmable Active Droop ® QFET QS Quiet Series RapidConfigure ...

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