FGH40N65UFD Fairchild Semiconductor, FGH40N65UFD Datasheet
FGH40N65UFD
Available stocks
Related parts for FGH40N65UFD
FGH40N65UFD Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGH40N65UFD Rev. A1 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new ses- ries of Field Stop IGBTs offer the optimum performance for = 40A C Solar Inverter, UPS, SMPS and PFC applications where low conduction and switching losses are essential ...
Page 2
... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGH40N65UFD Rev. A1 Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V 250µ ...
Page 3
... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH40N65UFD Rev 25°C unless otherwise noted C Test Conditions 20A 125 125 =20A, dI /dt = 200A/µ ...
Page 4
... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Common Emitter V = 15V GE 3.0 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T FGH40N65UFD Rev. A1 Figure 2. Typical Output Characteristics 120 12V 100 80 60 10V 0.0 4.5 6.0 [V] CE Figure 4. Transfer Characteristics 120 100 80 60 ...
Page 5
... Collector-Emitter Voltage, V Figure 11. SOA Characteristics 400 100 10 1 Single Nonrepetitive Pulse 0.1 Curves must be derated linearly with increase in temperature 0. Collector-Emitter Voltage, V FGH40N65UFD Rev. A1 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10 ...
Page 6
... Collector Current, I Figure 17. Switching Loss vs. Collector Current 10 Common Emitter Ω 15V 125 0 Collector Current, I FGH40N65UFD Rev. A1 Figure 14. Turn-on Characteristics vs. 500 t d(off) 100 Ω Figure 16. Switching Loss vs. Gate Resistance 10 t d(off 0.3 ...
Page 7
... Figure 21. Stored Charge 100 µ 200A µ di/dt = 100A Forward Current, I Figure 23.Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGH40N65UFD Rev. A1 Figure 20. Typical Reverse Current vs. 200 100 0 125 ...
Page 8
... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH40N65UFD Rev Dimensions in Millimeters www.fairchildsemi.com ...
Page 9
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...