SGH40N60UF Fairchild Semiconductor, SGH40N60UF Datasheet
SGH40N60UF
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SGH40N60UF Summary of contents
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... G G TO-3PN unless otherwise noted C Description @ 100 100 C C Parameter IGBT = 2 20A CE(sat SGH40N60UF Units 600 160 A 160 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.77 C C/W SGH40N60UF Rev. A1 ...
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... Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 4.5 6.5 V 2.1 2 1430 -- pF 170 -- 130 ns 50 150 ns 160 -- uJ 200 -- uJ 360 600 110 200 ns 144 250 ns 310 -- uJ 430 -- uJ 740 1200 uJ 97 150 SGH40N60UF Rev. A1 ...
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... GE = 25℃ 125℃ Collector - Emitter Voltage, V [V] CE Characteristics V = 300V CC Load Current : peak of square wave = 100℃ 100 Frequency [KHz] Common Emitter T = 125℃ C 40A 20A I = 10A Gate - Emitter Voltage SGH40N60UF Rev 1000 20 ...
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... 20A C = 25℃ 125℃ Eon C Eoff Eon Eoff 10 100 Gate Resistance Common Emitter = ± 15V V = 300V 25℃ 125℃ Collector Current, I [A] C Collector Current SGH40N60UF Rev. A1 200 200 40 ...
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... Fig 17. Transient Thermal Impedance of IGBT = 25℃ C 300 100 V 200 Gate Charge Safe Operating Area o V =20V, T =100 100 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGH40N60UF Rev. A1 120 1000 ...
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... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters SGH40N60UF Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...