FGA30N120FTD Fairchild Semiconductor, FGA30N120FTD Datasheet

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FGA30N120FTD

Manufacturer Part Number
FGA30N120FTD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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FGA30N120FTDTU
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FGA30N120FTDTU
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©2009 Fairchild Semiconductor Corporation
FGH30N120FTD
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGA30N120FTD
1200V, 30A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
Applications
• Induction heating and Microwave oven
• Soft switching applications
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Rev. A
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
= 1.6V @ I
Description
Parameter
TO-3P
C
= 30A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applica-
tions.
o
o
o
C
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
339
132
300
60
30
90
30
Max.
0.38
1.2
C
E
40
May 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
C
C
C
tm

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FGA30N120FTD Summary of contents

Page 1

... FGA30N120FTD 1200V, 30A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage 1. CE(sat) • High input impedance Applications • Induction heating and Microwave oven • Soft switching applications Absolute Maximum Ratings Symbol ...

Page 2

... Package Marking and Ordering Information Device Marking Device FGA30N120FTD FGA30N120FTDTU For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter Off Characteristics BV Collector to Emitter Breakdown Voltage V CES I Collector Cut-Off Current CES I G-E Leakage Current ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGA30N120FTD Rev 25°C unless otherwise noted C Test Conditions Min 30A 125 ...

Page 4

Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 20V 150 17V 15V 120 Collector-Emitter Voltage, V Figure 3. Typical Saturation Voltage Characteristics 120 Common Emitter V ...

Page 5

Typical Performance Characteristics Figure 7. Saturation Voltage vs 60A 4 30A I = 15A Gate-Emitter Voltage, V Figure 9. Gate charge Characteristics 15 Common Emitter ...

Page 6

Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current 1000 Common Emitter Ω 15V 125 C C 100 Collector ...

Page 7

... Figure 19. Reverse Current 50 200A di/dt = 100A Forward Current, I Figure 21. Reverse Recovery Time 1000 di/dt = 100A/ 800 200A/ 600 400 10 20 Forward Current, I Figure 22. Transient Thermal Impedance of IGBT FGA30N120FTD Rev. A Figure 20. Stored Charge µ s µ [A] F µ s µ [ µ ...

Page 8

Mechanical Dimensions Rev. A FGH30N120FTD TO-3PN 8 www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA30N120FTD Rev. A F-PFS™ PowerTrench ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ ...

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