FGPF4633 Fairchild Semiconductor, FGPF4633 Datasheet - Page 4

• Manufacturer Part Number: FGPF4633
• Description: Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGPF4633 Rev. B
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
15
12
70
10
20
16
12
9
6
3
0
6
8
4
0
0
0
0
Common Emitter
T
C
Gate Resistance
= 25
I
C
40A
= 20A
o
10
C
4
Gate-Emitter Voltage, V
15
Gate Resistance, R
Gate Charge, Q
t
d(on)
t
r
70A
20
V
8
CC
= 100V
30
Common Emitter
V
I
T
T
C
C
C
CC
30
12
= 20A
= 25
= 125
g
= 200V, V
[nC]
200V
Common Emitter
T
G
C
o
[ Ω ]
C
GE
o
= 125
C
45
GE
[V]
40
16
GE
o
C
= 15V
60
50
20
4
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteristics
Figure 12. Turn-off Characteristics vs.
3000
2000
1000
0.01
500
100
500
100
0.1
10
40
1
0
0.1
0.1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Gate Resistance
Collector-Emitter Voltage, V
10
t
t
d(off)
f
Gate Resistance, R
1
20
1
10
Common Emitter
V
I
T
T
C
30
CC
C
C
= 20A
DC
= 25
= 125
Common Emitter
V
T
G
= 200V, V
C
GE
10 ms
[ Ω ]
C
C
C
= 25
o
oes
ies
= 0V, f = 1MHz
res
CE
1ms
C
o
C
CE
100
o
[V]
C
40
100
10
[V]
GE
μ
10
www.fairchildsemi.com
s
= 15V
μ
s
500
50
30