FGB20N60SFD Fairchild Semiconductor, FGB20N60SFD Datasheet - Page 3

• Manufacturer Part Number: FGB20N60SFD
• Manufacturer: Fairchild Semiconductor

FGB20N60SFD Rev. A
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
t
Q
Symbol
rr
FM
g
ge
gc
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Parameter
I
I
F
F
= 10A
=10A, dI
V
V
CE
GE
Test Conditions
F
= 400V, I
= 15V
/dt = 200A/μs
T
C
T
= 25°C unless otherwise noted
C
= 25°C unless otherwise noted
3
C
= 20A,
T
T
T
T
T
T
C
C
C
C
C
C
= 25
= 125
= 25
= 125
= 25
= 125
o
o
o
C
C
C
o
o
o
C
C
C
Min.
-
-
-
-
-
-
-
-
-
65
33
7
Typ.
1.9
1.7
34
57
41
96
-
-
-
Max
2.5
www.fairchildsemi.com
-
-
-
-
-
Units
nC
nC
nC
nC
ns
V