FGA180N33ATD Fairchild Semiconductor, FGA180N33ATD Datasheet
FGA180N33ATD
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FGA180N33ATD Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGA180N33ATD Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 40A C tions where low conduction and switching losses are essential. ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA180N33ATD Rev. A Packaging Package Type Qty per Tube TO-3P Tube T = 25°C unless otherwise noted C Test Conditions = 0V 400µ ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cyrrent rr Q Diode Reverse Recovery Charge rr FGA180N33ATD Rev 25°C unless otherwise noted C Test Conditions Min 20A 125 ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.1 Common Emitter V = 15V GE 1.8 1.5 1.2 0.9 0 100 Collector-EmitterCase Temperature, T FGA180N33ATD Rev. A Figure 2. Typical Output Characteristics 200 T 8V 150 100 [V] CE Figure 4. Transfer Characteristics 200 Common Emitter V ...
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... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 500 t 100 r Common Emitter t V d(on Gate Resistance, R FGA180N33ATD Rev. A Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C C 4000 2000 [V] GE Figure 10. SOA Characteristics 1000 100 200V ...
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... Collector Current, I Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics 500 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA180N33ATD Rev. A Figure 14. Turn-off Characteristics vs. 1000 100 t r Common Emitter d(on 120 150 ...
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... Forward Current, I Figure 19.Reverse Recovery Time 40 di/dt = 100A/ 30 200A Forward Current 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA180N33ATD Rev. A Figure 18. Stored Charge 60 50 µ µ [A] F µ s µ [A] F Figure 20.Transient Thermal Impedance of IGBT ...
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... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA180N33ATD Rev. A TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 8 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA180N33ATD Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...