FGD4536 Fairchild Semiconductor, FGD4536 Datasheet

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FGD4536

Manufacturer Part Number
FGD4536
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGD4536TM
Manufacturer:
MICROCHIP
Quantity:
3 000
Part Number:
FGD4536TM
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. A
Absolute Maximum Ratings
Thermal Characteristics
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1
* Ic_pluse limited by max Tj
FGD4536
360V, PDP IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
• RoHS Compliant
Application
• PDP System
V
V
I
P
T
T
T
R
R
C pulse(1)*
stg
J
L
CES
GES
D
θJC
θJA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
CE (sat)
D-PAK
µ
sec
=1.59 V @ I
C
Description
Parameter
C
= 50 A
@ T
@ T
@ T
C
C
C
1
= 25
= 25
= 100
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
o
o
C
C
o
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
± 30
360
220
125
300
50
Max.
62.5
1.0
March 2011
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
C
C
C

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FGD4536 Summary of contents

Page 1

... Notes: µ (1) Half Sine Wave, D < 0.01, pluse width < 1 sec * Ic_pluse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of =1. trench IGBTs offer the optimum performance for PDP C applications where low conduction and switching losses are essential ...

Page 2

... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGD4536 Rev. A Package Reel Size TO252 380mm T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V 250µA GE ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.7 1.6 1.5 1.4 1.3 1.2 1.1 Common Emitter V = 15V GE 1 Collector-EmitterCase Temperature, T FGD4536 Rev. A Figure 2. Typical Output Characteristics 12V T 200 10V 150 100 [V] CE Figure 4. Transfer Characteristics Common Emitter 200 V T ...

Page 4

... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 100 d(on Gate Resistance, R FGD4536 Rev. A Figure 8. Capacitance Characteristics GE 2400 Common Emitter 125 C C 2000 1600 1200 800 400 [V] GE Figure 10. SOA Characteristics 500 100 200V 0 ...

Page 5

... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 500 100 10 1 Safe Operating Area 15V 125 0 Collector-Emitter Voltage, V FGD4536 Rev. A Figure 14. Turn-off Characteristics vs. 400 100 Common Emitter Ω 15V 125 ...

Page 6

... Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0. FGD4536 Rev Duty Factor t1/t2 Peak T = Pdm x Zthjc + Rectangular Pulse Duration [sec www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FGD4536 Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGD4536 Rev. A ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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