FGA60N65SMD Fairchild Semiconductor, FGA60N65SMD Datasheet
FGA60N65SMD
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FGA60N65SMD Summary of contents
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... Maximum Lead Temp. for soldering T L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 Fairchild Semiconductor Corporation FGA60N65SMD Rev. C0 General Description o =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series J of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, Welder and PFC applications where low conduction and switching losses are essential ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f E Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts FGA60N65SMD Rev. C0 Parameter Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 250mA 0V 250mA GE C ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM E Reverse Recovery Energy rec t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Current rr Q Diode Reverse Recovery Charge rr FGA60N65SMD Rev. C0 (Continued) Test Conditions Min 400V 60A 15V 25°C unless otherwise noted C Test Conditions Min ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Common Emitter V = 15V GE 3.0 2.5 2.0 1.5 1 100 Collector-EmitterCase Temperature, T FGA60N65SMD Rev. C0 Figure 2. Typical Output Characteristics 180 12V 150 10V 120 [V] CE Figure 4. Transfer Characteristics 180 150 ...
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... Collector-Emitter Voltage, V Figure 11. SOA Characteristics 300 100 *Notes: 0 175 Single Pulse 0. Collector-Emitter Voltage, V FGA60N65SMD Rev. C0 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 ...
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... Gate Resistance, R Figure 15. Turn-off Characteristics vs. Collector Current 1000 t d(off) 100 Collector Current, I Figure 17. Switching Loss vs. Collector Current 10 1 0.1 0. Collector Current, I FGA60N65SMD Rev. C0 Figure 14. Turn-on Characteristics vs. 1000 Common Emitter 100 C t d(off Figure 16 ...
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... 1200 175 C C 1000 800 600 400 didt = 200A/uS 200 Forward Current, I FGA60N65SMD Rev. C0 Figure 20. Load Current Vs. Frequency 180 Common Emitter 160 V = 15V GE 140 120 100 125 150 175 Figure 22. Reverse Recovery Current ...
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... Typical Performance Characteristics 0.5 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 0.005 1E-5 FGA60N65SMD Rev. C0 Figure 25.Transient Thermal Impedance of IGBT 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode 0.5 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0 ...
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... Mechanical Dimensions FGA60N65SMD Rev. C0 TO-3PN 9 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA60N65SMD Rev. C0 ® * PDP SPM™ Power-SPM™ ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® ...