FGA30S120P Fairchild Semiconductor, FGA30S120P Datasheet

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FGA30S120P

Manufacturer Part Number
FGA30S120P
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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FGA30S120P
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FAIRCHILD
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©2011 Fairchild Semiconductor Corporation
FGA30S120P Rev. C0
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Limited by Tjmax
FGA30S120P
Shorted Anode
Features
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
• Induction Heating and Microwave Oven
• Soft switching Application
V
V
I
I
I
I
P
T
T
T
R
R
C
CM (1)
F
F
CES
GES
D
J
stg
L
qJC
qJA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G C E
CE(sat)
TM
IGBT
=1.75V @ I
TO-3PN
Description
Parameter
T
C
C
= 25°C unless otherwise noted
= 30A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced Field Stop Trench and ShortedAnode technol-
ogy, Fairchild’s Shorted Anode
conduction and switching performances, and easy parallel oper-
ation with exceptional avalanche capability. This device is
designed for Induction Heating and Microwave Oven.
o
o
o
C
C
C
o
o
o
C
C
C
Typ.
--
--
G
-55 to +175
-55 to +175
Ratings
1300
±25
348
174
300
60
30
90
60
30
TM
Max.
0.43
Trench IGBTs offer superior
40
C
E
January 2012
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
C
C
C

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FGA30S120P Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient qJA Notes: 1: Limited by Tjmax ©2011 Fairchild Semiconductor Corporation FGA30S120P Rev. C0 General Description Using advanced Field Stop Trench and ShortedAnode technol- ogy, Fairchild’s Shorted Anode = 30A C conduction and switching performances, and easy parallel oper- ation with exceptional avalanche capability. This device is designed for Induction Heating and Microwave Oven ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA30S120P Rev. C0 Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions Min 1300 ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case 3.5 Common Emitter V = 15V GE 3.0 2.5 2 1.5 1 100 Collector-EmitterCase Temperature, T FGA30S120P Rev. C0 Figure 2. Typical Saturation Voltage 10V [V] CE Figure 4. Transfer Characteristics 4.0 5.0 6.0 [V] CE Figure 6. Saturation Voltage vs. Vge 60A 30A = 15A 125 150 175 ...

Page 4

... Gate Resistance 500 t r 100 Common Emitter 30A t C d(on Gate Resistance, R FGA30S120P Rev. C0 Figure 8. Capacitance Characteristics 10000 Common Emitter 175 [V] GE Figure 10. SOA Characteeristics 400V 600V 60 [nC] Figure 12. Turn-off Characteristics vs. = 600V 15V ...

Page 5

... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 175 100 Collector-Emitter Voltage, V FGA30S120P Rev. C0 Figure 14.Turn-off Characteristics VS d(on) 60 [A] C Figure 16. Switching Loss VS. Gate Resistance } Figure 18. Forward Characteristics ...

Page 6

... Figure 19. Transient Thermal Impedance of IGBT 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA30S120P Rev. C0 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FGA30S120P Rev. C0 TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA30S120P Rev. C0 ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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